Read-mostly memory

In this article, we will delve into the fascinating world of Read-mostly memory, with the aim of exploring the different aspects, meanings and repercussions that this concept encompasses. From its origins to its relevance today, we will cover each facet of Read-mostly memory in a detailed and exhaustive manner, with the aim of providing a complete understanding of this topic. Through analysis, reflections and concrete examples, we seek to offer the reader a comprehensive and enriching vision that allows delving into the knowledge of Read-mostly memory and its relevance in the contemporary context.

Read-mostly memory (RMM) is a type of memory that can be read fast, but written to only slowly.

Historically, the term was used to refer to different types of memory over time:

In 1970, it was used by Intel and Energy Conversion Devices to refer to a new type of amorphous and crystalline nonvolatile and reprogrammable semiconductor memory (phase-change memory aka PCM/PRAM).[1][2] However, it was also used to refer to reprogrammable memory (REPROM)[3] and magnetic-core memory.[4]

The term has mostly fallen into disuse, but is sometimes used referring to electrically erasable programmable read-only (EEPROM) or flash memory today.[5]

See also

References

  1. ^ Neale, Ronald "Ron" G.; Nelson, D. L.; Moore, Gordon Earle (1970-09-28). "Nonvolatile and reprogrammable, the read-mostly memory is here" (PDF). Electronics. McGraw-Hill. pp. 56–60. S2CID 137556114. Archived from the original (PDF) on 2022-07-07. Retrieved 2020-07-01.
  2. ^ Handy, Jim (2018-01-17). "Original PCM Article from 1970". The Memory Guy, Objective Analysis, Semiconductor Market Research. Archived from the original on 2020-07-01. Retrieved 2020-07-01.
  3. ^ Bode, Arndt ; Händler, Wolfgang (1980). Written at Erlangen, Germany. Rechnerarchitektur: Grundlagen und Verfahren (in German) (1 ed.). Berlin / Heidelberg, Germany; New York, USA: Springer-Verlag. p. 102. ISBN 3-540-09656-6. Retrieved 2020-07-01. RMM (Read mostly memory) oder REPROM (Reprogrammable memory): Semifestspeicher, bei denen das Schreiben möglich, jedoch wesentlich aufwendiger als das Lesen ist (meist um einige Zehnerpotenzen). (xii+278+2 pages)
  4. ^ Klar, Rainer (1989) . "Tabelle 6.2 Beispiele mikroprogrammierter Rechner" [Table 6.2 Examples of micro-programmed computers]. Digitale Rechenautomaten – Eine Einführung in die Struktur von Computerhardware [Digital Computers – An Introduction into the structure of computer hardware]. Sammlung Göschen (in German). Vol. 2050 (4th reworked ed.). Berlin, Germany: Walter de Gruyter & Co. p. 223. ISBN 3-11011700-2. Honeywell H4200 1966 Kernspeicher 2 Kerne/Bit RMM: Read-mostly-Memory, d.h. Speicher mit langsame Schreiben, aber schnellem Lesen (320 pages)
  5. ^ Astels, Dave (2020-07-01) . "Read Mostly Memory". adafruit. Archived from the original on 2020-07-01. Retrieved 2020-07-01.

Further reading

  • United States 4199692A, "Amorphous non-volatile ram"